Результаты поиска PBSS4612PA,115

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  • NXP Semiconductors — NXP Semiconductors PBSS4612PA,115 Collector- Emitter Voltage Vceo Max: 12 V Configuration: Single Continuous Collector Current: 6 A Current - Collector (ic) (max): 6A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 200 Dc Current Gain (hfe) (min) @ Ic, Vce: 260 @ 2A, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 80MHz Gain Bandwidth Product Ft: 80 MHz ID_COMPONENTS: 1949652 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 7 A Maximum Operating Frequency: 80 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 3-HUSON Power - Max: 2.1W Power Dissipation: 2.1 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 275mV @ 300mA, 6A Voltage - Collector Emitter Breakdown (max): 12V RoHS: yes Collector- Base Voltage VCBO: 12 V Collector- Emitter Voltage VCEO Max: 12 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 7 A Gain Bandwidth Product fT: 80 MHz DC Collector/Base Gain hfe Min: 200 DC Current Gain hFE Max: 440 Maximum Power Dissipation: 2.1 W Factory Pack Quantity: 3000 Other Names: 934063489115