Результаты поиска PBSS4350D,135

Найдено 2 результатов.

• PBSS4350D,135
  Philips Semiconductors — Philips Semiconductors PBSS4350D,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 500 mA at 2 V, 200 at 1 A at 2 V, 100 at 2 A at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOP DC Current Gain hFE Max: 200 at 500 mA at 2 V Maximum Power Dissipation: 750 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 PBSS4350D
• PBSS4350D,135
  NXP Semiconductors — Philips Semiconductors PBSS4350D,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 500 mA at 2 V, 200 at 1 A at 2 V, 100 at 2 A at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOP DC Current Gain hFE Max: 200 at 500 mA at 2 V Maximum Power Dissipation: 750 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 PBSS4350D