Результаты поиска PBSS4350D,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors PBSS4350D,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Continuous Collector Current: 3 A Current - Collector (ic) (max): 3A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 100 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949763 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 5 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 750mW Power Dissipation: 600 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 200 at 500 mA at 2V Maximum Power Dissipation: 600 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4350D T/R Other Names: 568-4158-2, 934055947115, PBSS4350D T/R