Результаты поиска PBSS4350D

Найдено 9 результатов.

• PBSS4350D
  Philips Semiconductors —
• PBSS4350D
  Philips Semiconductors —
• pbss4350d
  NXP Semiconductors —
• PBSS4350D,135
  Philips Semiconductors — Philips Semiconductors PBSS4350D,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 500 mA at 2 V, 200 at 1 A at 2 V, 100 at 2 A at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOP DC Current Gain hFE Max: 200 at 500 mA at 2 V Maximum Power Dissipation: 750 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 PBSS4350D
• PBSS4350D,125
  Philips Semiconductors — Philips Semiconductors PBSS4350D,125 RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 Mounting Style: SMD/SMT Package / Case: SOT-457 Continuous Collector Current: 3 A Maximum Power Dissipation: 600 mW Factory Pack Quantity: 3000
• PBSS4350D,135
  NXP Semiconductors — Philips Semiconductors PBSS4350D,135 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 500 mA at 2 V, 200 at 1 A at 2 V, 100 at 2 A at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: TSOP DC Current Gain hFE Max: 200 at 500 mA at 2 V Maximum Power Dissipation: 750 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 10000 Part # Aliases: /T3 PBSS4350D
• PBSS4350D,125
  NXP Semiconductors — Philips Semiconductors PBSS4350D,125 RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 Mounting Style: SMD/SMT Package / Case: SOT-457 Continuous Collector Current: 3 A Maximum Power Dissipation: 600 mW Factory Pack Quantity: 3000
• PBSS4350D,115
  NXP Semiconductors — NXP Semiconductors PBSS4350D,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Continuous Collector Current: 3 A Current - Collector (ic) (max): 3A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 100 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949763 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 5 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 750mW Power Dissipation: 600 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 200 at 500 mA at 2V Maximum Power Dissipation: 600 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS4350D T/R Other Names: 568-4158-2, 934055947115, PBSS4350D T/R
• PBSS4350D /T3
  NXP Semiconductors — NXP Semiconductors PBSS4350D /T3 Collector- Base Voltage Vcbo: 60 V Collector- Emitter Voltage Vceo Max: 50 V Collector-emitter Saturation Voltage: 6 V Configuration: Single Continuous Collector Current: 3 A Dc Collector/base Gain Hfe Min: 200 at 500 mA at 2 V Emitter- Base Voltage Vebo: 6 V Factory Pack Quantity: 10000 Gain Bandwidth Product Ft: 100 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 750 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: TSOP Part # Aliases: PBSS4350D,135 Product Category: Transistors Bipolar - BJT Rohs: yes Transistor Polarity: NPN