Результаты поиска PBSS4330X,115
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- NXP Semiconductors — NXP Semiconductors PBSS4330X,115 Collector- Emitter Voltage Vceo Max: 30 V Configuration: Single Current - Collector (ic) (max): 3A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 1A, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949825 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 3 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 1.6W Power Dissipation: 1600 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 300mV @ 300mA, 3A Voltage - Collector Emitter Breakdown (max): 30V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 300 at 0.1 A at 2 V, 300 at 0.5 A at 2 V, 270 at 1 A at 2 V, 230 at 2 A at 2 V, 180 at 3 A at 2 V DC Current Gain hFE Max: 300 at 0.1 A at 2 V Maximum Power Dissipation: 1600 mW Factory Pack Quantity: 1000 Part # Aliases: PBSS4330X T/R Other Names: 934058036115, PBSS4330X T/R