Результаты поиска PBSS4220V,115
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- NXP Semiconductors — NXP Semiconductors PBSS4220V,115 Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 210MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SS Mini-6 (SOT-666) Power - Max: 900mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 20V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 20 V Collector- Emitter Voltage VCEO Max: 20 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 210 MHz DC Collector/Base Gain hfe Min: 220 at 1 mA at 2 V, 220 at 100 mA at 2 V, 220 at 500 mA at 2 V, 200 at 1 A at 2 V, 120 at 2 A at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 220 at 1 mA at 2 V Maximum Power Dissipation: 900 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 4000 Part # Aliases: PBSS4220V T/R Other Names: 934059259115, PBSS4220V T/R