Результаты поиска PBSS4041SN,115

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• PBSS4041SN,115
  NXP Semiconductors — NXP Semiconductors PBSS4041SN,115 Current - Collector (ic) (max): 6.7A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 4A, 2V Frequency - Transition: 130MHz Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 2.3W Series: - Transistor Type: 2 NPN (Dual) Vce Saturation (max) @ Ib, Ic: 350mV @ 350mA, 7A Voltage - Collector Emitter Breakdown (max): 60V RoHS: yes Configuration: Dual Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Gain Bandwidth Product fT: 130 MHz DC Collector/Base Gain hfe Min: 300 Mounting Style: SMD/SMT Continuous Collector Current: 6.7 A Maximum Power Dissipation: 0.73 W Factory Pack Quantity: 1000 Other Names: 568-6406-2, PBSS4041SN,115