Результаты поиска PBSS306PX,115
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- NXP Semiconductors — NXP Semiconductors PBSS306PX,115 Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Current - Collector (ic) (max): 3.7A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949465 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 3.7 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 2.1W Power Dissipation: 2100 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 300mV @ 400mA, 4A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 3.7 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 0.5 A at 2 V, 150 at 1 A at 2 V, 100 at 2 A at 2 V, 25 at 4 A at 2 V DC Current Gain hFE Max: 200 at 0.5 A at 2 V Maximum Power Dissipation: 2100 mW Factory Pack Quantity: 1000 Part # Aliases: PBSS306PX T/R Other Names: 934059019115, PBSS306PX T/R