Результаты поиска PBSS304ND,115
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- NXP Semiconductors — NXP Semiconductors PBSS304ND,115 Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Quad Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 240 @ 500mA, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 140MHz ID_COMPONENTS: 1949543 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 3 A Maximum Operating Frequency: 140 MHz (Typ) Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.1W Power Dissipation: 2500 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 505mV @ 600mA, 6A Voltage - Collector Emitter Breakdown (max): 80V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 140 MHz DC Collector/Base Gain hfe Min: 240 at 0.5 A at 2 V, 190 at 1 A at 2 V, 115 at 2 A at 2 V, 70 at 3 A at 2 V, 45 at 4 A at 2 V, 35 at 5 A at 2 V, 25 at 6 A at 2 V DC Current Gain hFE Max: 240 at 0.5 A at 2 V Maximum Power Dissipation: 360 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS304ND T/R Other Names: 568-4175-2, 934060013115, PBSS304ND T/R