Результаты поиска PBSS302PD,115
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- NXP Semiconductors — NXP Semiconductors PBSS302PD,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Quad Collector Continuous Collector Current: - 4 A Current - Collector (ic) (max): 4A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 30 Dc Current Gain (hfe) (min) @ Ic, Vce: 175 @ 2A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 110MHz ID_COMPONENTS: 1949777 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 4 A Maximum Operating Frequency: 110 MHz (Typ) Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.1W Power Dissipation: 2500 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 450mV @ 600mA, 6A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 15 A Gain Bandwidth Product fT: 110 MHz DC Collector/Base Gain hfe Min: 30 DC Current Gain hFE Max: 200 at 0.5 A at 2V Maximum Power Dissipation: 360 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS302PD T/R Other Names: 568-4152-2, 934059132115, PBSS302PD T/R