Результаты поиска PBSS2540E,115
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- NXP Semiconductors — NXP Semiconductors PBSS2540E,115 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 450MHz ID_COMPONENTS: 1949744 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Frequency: 450 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 450 MHz DC Collector/Base Gain hfe Min: 200 at 10 mA at 2 V, 100 at 100 mA at 2 V, 50 at 500 mA at 2 V DC Current Gain hFE Max: 200 at 10 mA at 2 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS2540E T/R Other Names: 934059169115, PBSS2540E T/R