Результаты поиска PBRN123YS,126

Найдено 1 результатов.

• PBRN123YS,126
  NXP Semiconductors — NXP Semiconductors PBRN123YS,126 Current - Collector (ic) (max): 800mA Current - Collector Cutoff (max): 500nA Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 300mA, 5V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 700mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 10K Transistor Type: NPN - Pre-Biased Vce Saturation (max) @ Ib, Ic: 1.15V @ 8mA, 800mA Voltage - Collector Emitter Breakdown (max): 40V Other Names: 934059138126, PBRN123YS AMO