Результаты поиска PBLS2002D,115
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- NXP Semiconductors — NXP Semiconductors PBLS2002D,115 Collector- Emitter Voltage Vceo Max: 50 V @ NPN or 20 V @ PNP Configuration: Dual Current - Collector (ic) (max): 100mA, 1A Current - Collector Cutoff (max): 1ВµA, 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V Frequency - Transition: 185MHz ID_COMPONENTS: 1947934 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Peak Dc Collector Current: 100 mA @ NPN or 1000 mA @ PNP Power - Max: 600mW Resistor - Base (r1) (ohms): 4.7K Resistor - Emitter Base (r2) (ohms): 4.7K Series: - Transistor Polarity: NPN/PNP Transistor Type: 1 NPN Pre-Biased, 1 PNP Typical Input Resistor: 4.7 KOhm @ NPN Typical Resistor Ratio: 1 @ NPN Vce Saturation (max) @ Ib, Ic: 150mV @ 500ВµA, 10mA / 280mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 50V, 20V Product Category: Transistors Switching - Resistor Biased RoHS: yes Collector- Emitter Voltage VCEO Max: 50 V at NPN, 20 V at PNP Peak DC Collector Current: 100 mA at NPN, 1000 mA at PNP Factory Pack Quantity: 3000 Part # Aliases: PBLS2002D T/R Other Names: 934059271115, PBLS2002D T/R