Результаты поиска PBLS2001S,115
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- NXP Semiconductors — NXP Semiconductors PBLS2001S,115 Collector- Emitter Voltage Vceo Max: 50 V @ NPN or 20 V @ PNP Configuration: Dual Dual Collector Current - Collector (ic) (max): 100mA, 3A Current - Collector Cutoff (max): 1ВµA, 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 2A, 2V Frequency - Transition: 100MHz ID_COMPONENTS: 1947999 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Peak Dc Collector Current: 100 mA @ NPN or 3000 mA @ PNP Power - Max: 1.5W Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 2.2K Series: - Transistor Polarity: NPN/PNP Transistor Type: 1 NPN Pre-Biased, 1 PNP Typical Input Resistor: 2.2 KOhm @ NPN Typical Resistor Ratio: 1 @ NPN Vce Saturation (max) @ Ib, Ic: 150mV @ 500ВµA, 10mA / 355mV @ 300mA, 3A Voltage - Collector Emitter Breakdown (max): 50V, 20V Other Names: 934060277115, PBLS2001S T/R