Результаты поиска PBLS2001D,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors PBLS2001D,115 Collector- Emitter Voltage Vceo Max: - 20 V Configuration: Dual Continuous Collector Current: - 1 A Current - Collector (ic) (max): 100mA, 1A Current - Collector Cutoff (max): 1ВµA, 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V / 220 @ 500mA, 2V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 185MHz ID_COMPONENTS: 1947873 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-74-6 Peak Dc Collector Current: - 2 A Power - Max: 600mW Power Dissipation: 400 mW Resistor - Base (r1) (ohms): 2.2K Resistor - Emitter Base (r2) (ohms): 2.2K Series: - Transistor Polarity: NPN/PNP Transistor Type: 1 NPN Pre-Biased, 1 PNP Typical Input Resistor: 2.2 KOhms Typical Resistor Ratio: 1 @ NPN Vce Saturation (max) @ Ib, Ic: 150mV @ 500ВµA, 10mA / 280mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 50V, 20V Other Names: 934059269115, PBLS2001D T/R