Результаты поиска PBHV8215Z,115

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• PBHV8215Z,115
  NXP Semiconductors — NXP Semiconductors PBHV8215Z,115 Collector- Emitter Voltage Vceo Max: 150 V Configuration: Single Continuous Collector Current: 2 A Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 55 Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1A, 10V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 33MHz Gain Bandwidth Product Ft: 33 MHz ID_COMPONENTS: 1949721 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 4 A Maximum Operating Frequency: 33 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.45W Power Dissipation: 1.45 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 280mV @ 400mA, 2A Voltage - Collector Emitter Breakdown (max): 150V RoHS: yes Collector- Base Voltage VCBO: 350 V Collector- Emitter Voltage VCEO Max: 150 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 4 A Gain Bandwidth Product fT: 33 MHz DC Collector/Base Gain hfe Min: 55 DC Current Gain hFE Max: 240 Maximum Power Dissipation: 1.45 W Factory Pack Quantity: 1000 Other Names: 934063479115