Результаты поиска PBHV8118T,215

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• PBHV8118T,215
  NXP Semiconductors — NXP Semiconductors PBHV8118T,215 Collector- Emitter Voltage Vceo Max: 180 V Configuration: Single Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500mA, 10V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 30MHz Gain Bandwidth Product Ft: 30 MHz ID_COMPONENTS: 1949501 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Frequency: 30 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 300mW Power Dissipation: 300 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 50mV @ 20mA, 100mA Voltage - Collector Emitter Breakdown (max): 180V RoHS: yes Collector- Base Voltage VCBO: 400 V Collector- Emitter Voltage VCEO Max: 180 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 30 MHz DC Collector/Base Gain hfe Min: 50 DC Current Gain hFE Max: 250 Maximum Power Dissipation: 300 mW Factory Pack Quantity: 3000 Other Names: 934064195215