Результаты поиска PBHV8115Z,115

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• PBHV8115Z,115
  NXP Semiconductors — NXP Semiconductors PBHV8115Z,115 Collector- Emitter Voltage Vceo Max: 150 V Configuration: Dual Continuous Collector Current: 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Collector/base Gain Hfe Min: 100 Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500mA, 10V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 30MHz ID_COMPONENTS: 1949804 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Frequency: 30 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.4W Power Dissipation: 700 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 1A Voltage - Collector Emitter Breakdown (max): 150V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 400 V Collector- Emitter Voltage VCEO Max: 150 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 30 MHz DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 100 at 50 mA at 10 V Maximum Power Dissipation: 700 mW Factory Pack Quantity: 1000 Part # Aliases: PBHV8115Z T/R Other Names: 934061411115, PBHV8115Z T/R