Результаты поиска NJVMJD31CT4G

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• NJVMJD31CT4G
  ON Semiconductor — ON Semiconductor NJVMJD31CT4G Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V DC Collector/Base Gain hfe Min: 10 A Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: DPAK Continuous Collector Current: 3 A Maximum Power Dissipation: 15 W Minimum Operating Temperature: - 65 C