Результаты поиска NGTB20N120IHLWG

Найдено 2 результатов.

• NGTB20N120IHLWG
  ON Semiconductor — ON Semiconductor NGTB20N120IHLWG Collector- Emitter Voltage Vceo Max: 1200 V Continuous Collector Current At 25 C: 40 A Maximum Gate Emitter Voltage: 20 V Mounting Style: Through Hole Package / Case: TO-247 Power Dissipation: 250 W Rohs: yes RoHS: yes Collector- Emitter Voltage VCEO Max: 1200 V Continuous Collector Current at 25 C: 40 A
• NGTB20N120IHLWG
  ON Semiconductor — ON Semiconductor NGTB20N120IHLWG Collector- Emitter Voltage Vceo Max: 1200 V Continuous Collector Current At 25 C: 40 A Maximum Gate Emitter Voltage: 20 V Mounting Style: Through Hole Package / Case: TO-247 Power Dissipation: 250 W Rohs: yes RoHS: yes Collector- Emitter Voltage VCEO Max: 1200 V Continuous Collector Current at 25 C: 40 A