Результаты поиска NGD8201ANT4G

Найдено 2 результатов.

• NGD8201ANT4G
  ON Semiconductor — ON Semiconductor NGD8201ANT4G RoHS: yes Configuration: Single Collector- Emitter Voltage VCEO Max: 440 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 15 V Continuous Collector Current at 25 C: 20 A Gate-Emitter Leakage Current: 300 uA Power Dissipation: 125 W Maximum Operating Temperature: + 175 C Package / Case: DPAK Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT
• NGD8201ANT4G
  ON Semiconductor — ON Semiconductor NGD8201ANT4G RoHS: yes Configuration: Single Collector- Emitter Voltage VCEO Max: 440 V Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: 15 V Continuous Collector Current at 25 C: 20 A Gate-Emitter Leakage Current: 300 uA Power Dissipation: 125 W Maximum Operating Temperature: + 175 C Package / Case: DPAK Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT