Результаты поиска NGB8207ABNT4G

Найдено 1 результатов.

• NGB8207ABNT4G
  ON Semiconductor — ON Semiconductor NGB8207ABNT4G Collector- Emitter Voltage Vceo Max: 365 V Continuous Collector Current At 25 C: 20 A Maximum Gate Emitter Voltage: 15 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: D2PAK Power Dissipation: 165 W Rohs: yes RoHS: yes Collector- Emitter Voltage VCEO Max: 365 V Continuous Collector Current at 25 C: 20 A