Результаты поиска NE3517S03-A

Найдено 2 результатов.

• NE3517S03-A
  CEL (California Eastern Laboratories) — CEL (California Eastern Laboratories) NE3517S03-A Current - Test: 10mA Current Rating: 70mA Frequency: 20GHz Gain: 13.5dB Lead Free Status / Rohs Status: Lead free / RoHS Compliant Noise Figure: 0.7dB Package / Case: * Power - Output: - Series: - Transistor Type: HFET Voltage - Rated: 4V Voltage - Test: 2V RoHS: yes Technology Type: HEMT Forward Transconductance gFS (Max / Min): 55 mS Drain Source Voltage VDS: 4 V Gate-Source Breakdown Voltage: - 3 V Continuous Drain Current: 70 mA Maximum Operating Temperature: + 125 C Power Dissipation: 165 mW Mounting Style: SMD/SMT
• NE3517S03-A
  CEL (California Eastern Laboratories) — CEL (California Eastern Laboratories) NE3517S03-A Current - Test: 10mA Current Rating: 70mA Frequency: 20GHz Gain: 13.5dB Lead Free Status / Rohs Status: Lead free / RoHS Compliant Noise Figure: 0.7dB Package / Case: * Power - Output: - Series: - Transistor Type: HFET Voltage - Rated: 4V Voltage - Test: 2V RoHS: yes Technology Type: HEMT Forward Transconductance gFS (Max / Min): 55 mS Drain Source Voltage VDS: 4 V Gate-Source Breakdown Voltage: - 3 V Continuous Drain Current: 70 mA Maximum Operating Temperature: + 125 C Power Dissipation: 165 mW Mounting Style: SMD/SMT