Результаты поиска NDS8958

Найдено 5 результатов.

• NDS8958
  Fairchild Semiconductor — MOSFETs Dual N/P Channel FET Enhancement Mode
• NDS8958
  Fairchild Semiconductor — MOSFET N+P 30V 4A 8-SOIC
• NDS8958
  Fairchild Semiconductor — MOSFET N+P 30V 4A 8-SOIC
• NDS8958
  Fairchild Semiconductor — MOSFET N+P 30V 4A 8-SOIC
• NDS8958_Q
  Fairchild Semiconductor — Fairchild Semiconductor NDS8958_Q Configuration: Dual Dual Drain Continuous Drain Current: 5.3 A, - 4 A Drain-source Breakdown Voltage: +/- 30 V Fall Time: 10 ns, 19 ns Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Power Dissipation: 2 W Resistance Drain-source Rds (on): 0.035 Ohms Rise Time: 13 ns, 20 ns Transistor Polarity: N and P-Channel Typical Turn-off Delay Time: 29 ns, 40 ns Drain-Source Breakdown Voltage: +/- 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.035 Ohms Typical Turn-Off Delay Time: 29 ns, 40 ns