Результаты поиска NDC651N
Найдено 8 результатов.
- Fairchild Semiconductor — MOSFETs N-Ch LL FET Enhancement Mode
- Fairchild Semiconductor — MOSFET N-CH 30V 3.2A SSOT6
- Fairchild Semiconductor — MOSFET N-CH 30V 3.2A SSOT6
- Fairchild Semiconductor — MOSFET N-CH 30V 3.2A SSOT6
- Fairchild Semiconductor — Fairchild Semiconductor NDC651N_Q Configuration: Single Triple Drain Dual Source Continuous Drain Current: 3.2 A Drain-source Breakdown Voltage: 30 V Fall Time: 19 ns Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SSOT-6 Power Dissipation: 1.6 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.09 Ohms Rise Time: 19 ns Transistor Polarity: N-Channel Typical Turn-off Delay Time: 15 ns Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 0.09 Ohms Typical Turn-Off Delay Time: 15 ns
- Fairchild Semiconductor —
- Fairchild Semiconductor — MOSFETs 30V 3.2A N-CH ENHANCEMENT MODE
- Fairchild Semiconductor —