Результаты поиска NDB6060L

Найдено 5 результатов.

• NDB6060L
  Fairchild Semiconductor — MOSFETs N-Ch LL FET Enhancement Mode
• NDB6060L
  Fairchild Semiconductor — MOSFET N-CH 60V 48A TO-263AB
• NDB6060L
  Fairchild Semiconductor — MOSFET N-CH 60V 48A TO-263AB
• NDB6060L
  Fairchild Semiconductor — MOSFET N-CH 60V 48A TO-263AB
• NDB6060L_Q
  Fairchild Semiconductor — Fairchild Semiconductor NDB6060L_Q Configuration: Single Continuous Drain Current: 48 A Drain-source Breakdown Voltage: 60 V Fall Time: 161 ns Gate-source Breakdown Voltage: +/- 16 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: TO-263AB Power Dissipation: 100 W Resistance Drain-source Rds (on): 0.025 Ohms Rise Time: 320 ns Transistor Polarity: N-Channel Typical Turn-off Delay Time: 49 ns Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 16 V Resistance Drain-Source RDS (on): 0.025 Ohms Typical Turn-Off Delay Time: 49 ns