Результаты поиска NAND08GW3B2CN6E

Найдено 2 результатов.

• NAND08GW3B2CN6E
  STMicroelectronics — Numonyx NAND08GW3B2CN6E Access Time (max): 25us Address Bus: 30b Boot Type: Not Required Cell Type: NAND Density: 8Gb Interface Type: Parallel Mounting: Surface Mount Number Of Words: 1G Operating Supply Voltage (max): 3.6V Operating Supply Voltage (min): 2.7V Operating Supply Voltage (typ): 3/3.3V Operating Temp Range: -40C to 85C Operating Temperature Classification: Industrial Package Type: TSOP Pin Count: 48 Program/erase Volt (typ): 2.7 to 3.6V Supply Current: 30mA Sync/async: Asynchronous Word Size: 8b
• NAND08GW3B2CN6E
  Numonyx — Numonyx NAND08GW3B2CN6E Access Time (max): 25us Address Bus: 30b Boot Type: Not Required Cell Type: NAND Density: 8Gb Interface Type: Parallel Mounting: Surface Mount Number Of Words: 1G Operating Supply Voltage (max): 3.6V Operating Supply Voltage (min): 2.7V Operating Supply Voltage (typ): 3/3.3V Operating Temp Range: -40C to 85C Operating Temperature Classification: Industrial Package Type: TSOP Pin Count: 48 Program/erase Volt (typ): 2.7 to 3.6V Supply Current: 30mA Sync/async: Asynchronous Word Size: 8b