Результаты поиска MRFE6VP8600HSR5

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• MRFE6VP8600HSR5
  Freescale Semiconductor — Freescale Semiconductor MRFE6VP8600HSR5 RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 470 MHz to 860 MHz Gain: 18.8 dB at 860 MHz Output Power: 600 W at Peak Drain-Source Breakdown Voltage: 140 V Gate-Source Breakdown Voltage: 10 V Maximum Operating Temperature: + 150 C Package / Case: NI-1230S Forward Transconductance gFS (Max / Min): 15.6 S Mounting Style: SMD/SMT Power Dissipation: 1052 W