Результаты поиска MJD42CT4G

Найдено 5 результатов.

• MJD42CT4G
  ON Semiconductor — Transistors Bipolar- General Purpose 6A 100V 20W PNP
• MJD42CT4G
  ON Semiconductor — TRANS PWR PNP 6A 100V DPAK
• MJD42CT4G
  ON Semiconductor — TRANS PWR PNP 6A 100V DPAK
• MJD42CT4G
  ON Semiconductor — TRANS PWR PNP 6A 100V DPAK
• NJVMJD42CT4G
  ON Semiconductor — ON Semiconductor NJVMJD42CT4G Collector- Base Voltage Vcbo: 100 V Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Dc Collector/base Gain Hfe Min: 30 at 0.3 A at 4 V Dc Current Gain Hfe Max: 30 at 0.3 A at 4 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 3 MHz Maximum Dc Collector Current: 6 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 1750 mW Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Package / Case: DPAK Transistor Polarity: PNP Collector- Base Voltage VCBO: 100 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 6 A Gain Bandwidth Product fT: 3 MHz DC Collector/Base Gain hfe Min: 30 at 0.3 A at 4 V DC Current Gain hFE Max: 30 at 0.3 A at 4 V