Результаты поиска MJD31CT4G

Найдено 5 результатов.

• MJD31CT4G
  ON Semiconductor — Transistors Bipolar- General Purpose 3A 100V 15W NPN
• MJD31CT4G
  ON Semiconductor — TRANS PWR NPN 3A 100V DPAK
• MJD31CT4G
  ON Semiconductor — TRANS PWR NPN 3A 100V DPAK
• MJD31CT4G
  ON Semiconductor — TRANS PWR NPN 3A 100V DPAK
• NJVMJD31CT4G
  ON Semiconductor — ON Semiconductor NJVMJD31CT4G Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V DC Collector/Base Gain hfe Min: 10 A Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: DPAK Continuous Collector Current: 3 A Maximum Power Dissipation: 15 W Minimum Operating Temperature: - 65 C