Результаты поиска MCR08BT1

Найдено 12 результатов.

• MCR08BT1
  ON Semiconductor — SCRs 200V 800mA
• MCR08BT1
  ON Semiconductor — THYRISTOR SCR 0.8A 200V SOT223
• MCR08BT1
  ON Semiconductor — THYRISTOR SCR 0.8A 200V SOT223
• MCR08BT1G
  ON Semiconductor — SCRs THY .8A 200V SCR
• MCR08BT1G
  ON Semiconductor — THYRISTOR SCR 0.8A 200V SOT223
• MCR08BT1G
  ON Semiconductor — THYRISTOR SCR 0.8A 200V SOT223
• MCR08BT1G
  ON Semiconductor — THYRISTOR SCR 0.8A 200V SOT223
• MCR08BT1-D
  ON Semiconductor — Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
• MCR08BT1_06
  ON Semiconductor —
• MCR08BT1 T/R
  NXP Semiconductors — NXP Semiconductors MCR08BT1 T/R Breakover Current Ibo Max: 9 A Forward Voltage Drop: 1.7 V Gate Trigger Current (igt): 0.2 mA Gate Trigger Voltage (vgt): 0.8 V Holding Current (ih Max): 5 mA Maximum Gate Peak Inverse Voltage: 5 V Mounting Style: SMD/SMT Off-state Leakage Current @ Vdrm Idrm: 0.1 mA Package / Case: SC-73 Rated Repetitive Off-state Voltage Vdrm: 200 V Other Names: MCR08BT1,115