Результаты поиска MBT3906DW1T1G

Найдено 7 результатов.

• MBT3906DW1T1G
  ON Semiconductor — Diodes- Small Signal Switching SS GP XSTR PNP 40V
• MBT3906DW1T1G
  ON Semiconductor — TRANS DUAL GP 200MA 40V SC88
• MBT3906DW1T1G
  ON Semiconductor — TRANS DUAL GP 200MA 40V SC88
• MBT3906DW1T1G
  ON Semiconductor — TRANS DUAL GP 200MA 40V SC88
• SMBT3906DW1T1G
  ON Semiconductor — ON Semiconductor SMBT3906DW1T1G Collector- Base Voltage Vcbo: - 40 V Collector- Emitter Voltage Vceo Max: - 40 V Collector-emitter Saturation Voltage: - 0.25 V Configuration: Dual Continuous Collector Current: - 200 mA Dc Current Gain Hfe Max: 300 Emitter- Base Voltage Vebo: - 5 V Gain Bandwidth Product Ft: 250 MHz Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 150 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-363 Rohs: yes Transistor Polarity: PNP RoHS: yes Collector- Base Voltage VCBO: - 40 V Collector- Emitter Voltage VCEO Max: - 40 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 0.25 V Gain Bandwidth Product fT: 250 MHz DC Current Gain hFE Max: 300
• LMBT3906DW1T1G
  LRC (Leshan Radio Company) —
• MBT3906DW1T1G_09
  ONSEMI [ON Semiconductor] — Dual General Purpose Transistor