Результаты поиска M93S56-WMN6TP

Найдено 5 результатов.

• M93S56-WMN6TP
  STMicroelectronics — Serial EEPROMs 4KBIT E-EPROM
• SI1021R-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1021R-T1-GE3 Continuous Drain Current Id: -190mA Current - Continuous Drain (id) @ 25В° C: 190mA Drain Source Voltage Vds: -60V Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 1.7nC @ 15V ID_COMPONENTS: 2663566 Input Capacitance (ciss) @ Vds: 23pF @ 25V Mounting Type: Surface Mount On Resistance Rds(on): 4ohm Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini Power - Max: 250mW Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Rds(on) Test Voltage Vgs: 20V Series: TrenchFETВ® Threshold Voltage Vgs Typ: -3V Transistor Polarity: P Channel Vgs(th) (max) @ Id: 3V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 0.19 A Resistance Drain-Source RDS (on): 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 250 mW Factory Pack Quantity: 3000 Tradename: TrenchFET Part # Aliases: SI1021R-GE3 Other Names: SI1021R-T1-GE3TR
• SI1021R-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1021R-T1-GE3 Continuous Drain Current Id: -190mA Current - Continuous Drain (id) @ 25В° C: 190mA Drain Source Voltage Vds: -60V Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 1.7nC @ 15V ID_COMPONENTS: 2663566 Input Capacitance (ciss) @ Vds: 23pF @ 25V Mounting Type: Surface Mount On Resistance Rds(on): 4ohm Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini Power - Max: 250mW Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Rds(on) Test Voltage Vgs: 20V Series: TrenchFETВ® Threshold Voltage Vgs Typ: -3V Transistor Polarity: P Channel Vgs(th) (max) @ Id: 3V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 0.19 A Resistance Drain-Source RDS (on): 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 250 mW Factory Pack Quantity: 3000 Tradename: TrenchFET Part # Aliases: SI1021R-GE3 Other Names: SI1021R-T1-GE3TR
• SI1021R-T1-GE3
  Vishay Intertechnology — Vishay Intertechnology SI1021R-T1-GE3 Continuous Drain Current Id: -190mA Current - Continuous Drain (id) @ 25В° C: 190mA Drain Source Voltage Vds: -60V Drain To Source Voltage (vdss): 60V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 1.7nC @ 15V ID_COMPONENTS: 2663566 Input Capacitance (ciss) @ Vds: 23pF @ 25V Mounting Type: Surface Mount On Resistance Rds(on): 4ohm Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini Power - Max: 250mW Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 10V Rds(on) Test Voltage Vgs: 20V Series: TrenchFETВ® Threshold Voltage Vgs Typ: -3V Transistor Polarity: P Channel Vgs(th) (max) @ Id: 3V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 0.19 A Resistance Drain-Source RDS (on): 8 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 250 mW Factory Pack Quantity: 3000 Tradename: TrenchFET Part # Aliases: SI1021R-GE3 Other Names: SI1021R-T1-GE3TR
• SI1021R-T1-GE3/BKN
  Vishay Intertechnology —