Результаты поиска LF444CN/NOPB

Найдено 3 результатов.

• LF444CN/NOPB
  National Semiconductor — National Semiconductor LF444CN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 95 Common Mode Rejection Ratio (min): 70 dB Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 600ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 8 mA Current, Supply: 0.6 mA Gain Bandwidth Product: 1MHz Impedance, Thermal: 85 В°C/W Input Offset Voltage: 10 mV at +/- 15 V Input Voltage Range (max): 36 V Input Voltage Range (min): 6 V Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Maximum Dual Supply Voltage: +/- 18 V Maximum Operating Temperature: + 70 C Maximum Power Dissipation: 670 mW Minimum Operating Temperature: 0 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Amplifiers: Quad Number Of Channels: 4 Number Of Circuits: 4 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 14-DIP (0.300", 7.62mm) Package Type: DIP-14 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FETв„ў Slew Rate: 1 V/Вµs Supply Current: 1 mA at +/- 15 V Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 3000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain Db: 100 dB Voltage, Gain: 100 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 2 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±15 V Other Names: *LF444CN, *LF444CN/NOPB, LF444, LF444CN
• LF444CN/NOPB
  National Semiconductor — National Semiconductor LF444CN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 95 Common Mode Rejection Ratio (min): 70 dB Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 600ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 8 mA Current, Supply: 0.6 mA Gain Bandwidth Product: 1MHz Impedance, Thermal: 85 В°C/W Input Offset Voltage: 10 mV at +/- 15 V Input Voltage Range (max): 36 V Input Voltage Range (min): 6 V Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Maximum Dual Supply Voltage: +/- 18 V Maximum Operating Temperature: + 70 C Maximum Power Dissipation: 670 mW Minimum Operating Temperature: 0 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Amplifiers: Quad Number Of Channels: 4 Number Of Circuits: 4 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 14-DIP (0.300", 7.62mm) Package Type: DIP-14 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FETв„ў Slew Rate: 1 V/Вµs Supply Current: 1 mA at +/- 15 V Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 3000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain Db: 100 dB Voltage, Gain: 100 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 2 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±15 V Other Names: *LF444CN, *LF444CN/NOPB, LF444, LF444CN
• LF444CN/NOPB
  TI (Texas Instruments) — National Semiconductor LF444CN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 95 Common Mode Rejection Ratio (min): 70 dB Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 600ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 8 mA Current, Supply: 0.6 mA Gain Bandwidth Product: 1MHz Impedance, Thermal: 85 В°C/W Input Offset Voltage: 10 mV at +/- 15 V Input Voltage Range (max): 36 V Input Voltage Range (min): 6 V Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Maximum Dual Supply Voltage: +/- 18 V Maximum Operating Temperature: + 70 C Maximum Power Dissipation: 670 mW Minimum Operating Temperature: 0 C Mounting Style: Through Hole Mounting Type: Through Hole Number Of Amplifiers: Quad Number Of Channels: 4 Number Of Circuits: 4 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 14-DIP (0.300", 7.62mm) Package Type: DIP-14 Power Dissipation: 670 mW Resistance, Input: 10^12 Ohms Series: BI-FETв„ў Slew Rate: 1 V/Вµs Supply Current: 1 mA at +/- 15 V Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 3000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain Db: 100 dB Voltage, Gain: 100 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 2 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±15 V Other Names: *LF444CN, *LF444CN/NOPB, LF444, LF444CN