Результаты поиска LF444CM/NOPB

Найдено 3 результатов.

• LF444CM/NOPB
  National Semiconductor — National Semiconductor LF444CM/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 95 Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 600ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 8 mA Current, Supply: 0.6 mA Dual Supply Voltage (max): В±18V Dual Supply Voltage (min): В±3V Dual Supply Voltage (typ): В±5/В±9/В±12/В±15V Gain Bandwidth Product: 1MHz Impedance, Thermal: 85 В°C/W Input Bias Current: 100pA Input Offset Voltage: 10@В±15VmV Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting: Surface Mount Mounting Type: Surface Mount Number Of Elements: 4 Number Of Amplifiers: Quad Number Of Circuits: 4 Operating Temp Range: 0C to 70C Operating Temperature: 0В°C ~ 70В°C Operating Temperature Classification: Commercial Output Type: - Package / Case: 14-SOIC (3.9mm Width), 14-SOL Package Type: SOIC-14 Pin Count: 14 Power Dissipation: 670 mW Power Supply Rejection Ratio: 70dB Power Supply Requirement: Dual Rail/rail I/o Type: No Resistance, Input: 10^12 Ohms Series: BI-FETв„ў Shut Down Feature: No Single Supply Voltage (max): Not RequiredV Single Supply Voltage (min): Not RequiredV Single Supply Voltage (typ): Not RequiredV Slew Rate: 1 V/Вµs Technology: BiFET Temperature, Operating, Range: 0 to +70 В°C Type: General Purpose Amplifier Unity Gain Bandwidth Product: 1MHz Voltage - Input Offset: 3000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain In Db: 100dB Voltage, Gain: 100 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 2 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±15 V Other Names: *LF444CM, *LF444CM/NOPB, LF444CM
• LF444CM/NOPB
  National Semiconductor — National Semiconductor LF444CM/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 95 Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 600ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 8 mA Current, Supply: 0.6 mA Dual Supply Voltage (max): В±18V Dual Supply Voltage (min): В±3V Dual Supply Voltage (typ): В±5/В±9/В±12/В±15V Gain Bandwidth Product: 1MHz Impedance, Thermal: 85 В°C/W Input Bias Current: 100pA Input Offset Voltage: 10@В±15VmV Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting: Surface Mount Mounting Type: Surface Mount Number Of Elements: 4 Number Of Amplifiers: Quad Number Of Circuits: 4 Operating Temp Range: 0C to 70C Operating Temperature: 0В°C ~ 70В°C Operating Temperature Classification: Commercial Output Type: - Package / Case: 14-SOIC (3.9mm Width), 14-SOL Package Type: SOIC-14 Pin Count: 14 Power Dissipation: 670 mW Power Supply Rejection Ratio: 70dB Power Supply Requirement: Dual Rail/rail I/o Type: No Resistance, Input: 10^12 Ohms Series: BI-FETв„ў Shut Down Feature: No Single Supply Voltage (max): Not RequiredV Single Supply Voltage (min): Not RequiredV Single Supply Voltage (typ): Not RequiredV Slew Rate: 1 V/Вµs Technology: BiFET Temperature, Operating, Range: 0 to +70 В°C Type: General Purpose Amplifier Unity Gain Bandwidth Product: 1MHz Voltage - Input Offset: 3000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain In Db: 100dB Voltage, Gain: 100 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 2 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±15 V Other Names: *LF444CM, *LF444CM/NOPB, LF444CM
• LF444CM/NOPB
  TI (Texas Instruments) — National Semiconductor LF444CM/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 95 Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 600ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 8 mA Current, Supply: 0.6 mA Dual Supply Voltage (max): В±18V Dual Supply Voltage (min): В±3V Dual Supply Voltage (typ): В±5/В±9/В±12/В±15V Gain Bandwidth Product: 1MHz Impedance, Thermal: 85 В°C/W Input Bias Current: 100pA Input Offset Voltage: 10@В±15VmV Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting: Surface Mount Mounting Type: Surface Mount Number Of Elements: 4 Number Of Amplifiers: Quad Number Of Circuits: 4 Operating Temp Range: 0C to 70C Operating Temperature: 0В°C ~ 70В°C Operating Temperature Classification: Commercial Output Type: - Package / Case: 14-SOIC (3.9mm Width), 14-SOL Package Type: SOIC-14 Pin Count: 14 Power Dissipation: 670 mW Power Supply Rejection Ratio: 70dB Power Supply Requirement: Dual Rail/rail I/o Type: No Resistance, Input: 10^12 Ohms Series: BI-FETв„ў Shut Down Feature: No Single Supply Voltage (max): Not RequiredV Single Supply Voltage (min): Not RequiredV Single Supply Voltage (typ): Not RequiredV Slew Rate: 1 V/Вµs Technology: BiFET Temperature, Operating, Range: 0 to +70 В°C Type: General Purpose Amplifier Unity Gain Bandwidth Product: 1MHz Voltage - Input Offset: 3000ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 36 V, В±5 V ~ 18 V Voltage Gain In Db: 100dB Voltage, Gain: 100 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 2 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±15 V Other Names: *LF444CM, *LF444CM/NOPB, LF444CM