Результаты поиска LF442ACN/NOPB

Найдено 3 результатов.

• LF442ACN/NOPB
  National Semiconductor — National Semiconductor LF442ACN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 300ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 6.8 mA Current, Supply: 300 ОјA Gain Bandwidth Product: 1MHz Impedance, Thermal: 165 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 1 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 500ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 44 V, В±5 V ~ 22 V Voltage, Gain: 200 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 0.5 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±19 V Other Names: *LF442ACN, *LF442ACN/NOPB, LF442ACN
• LF442ACN/NOPB
  National Semiconductor — National Semiconductor LF442ACN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 300ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 6.8 mA Current, Supply: 300 ОјA Gain Bandwidth Product: 1MHz Impedance, Thermal: 165 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 1 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 500ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 44 V, В±5 V ~ 22 V Voltage, Gain: 200 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 0.5 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±19 V Other Names: *LF442ACN, *LF442ACN/NOPB, LF442ACN
• LF442ACN/NOPB
  TI (Texas Instruments) — National Semiconductor LF442ACN/NOPB -3db Bandwidth: - Amplifier Type: J-FET Bandwidth: 1 MHz Channel Separation: -120 Common Mode Rejection Ratio: 100 Current - Input Bias: 10pA Current - Output / Channel: - Current - Supply: 300ВµA Current, Input Bias: 10 pA Current, Input Offset: 5 pA Current, Output: 6.8 mA Current, Supply: 300 ОјA Gain Bandwidth Product: 1MHz Impedance, Thermal: 165 В°C/W Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device Mounting Type: Through Hole Number Of Amplifiers: Dual Number Of Circuits: 2 Operating Temperature: 0В°C ~ 70В°C Output Type: - Package / Case: 8-DIP (0.300", 7.62mm) Package Type: MDIP-8 Resistance, Input: 10^12 Ohms Series: BI-FET IIв„ў Slew Rate: 1 V/Вµs Temperature, Operating, Range: 0 to +70 В°C Voltage - Input Offset: 500ВµV Voltage - Supply, Single/dual (В±): 10 V ~ 44 V, В±5 V ~ 22 V Voltage, Gain: 200 V/mV Voltage, Input: 6 to 44 V Voltage, Noise: 35 nV/sqrt Hz Voltage, Offset: 0.5 mV Voltage, Output, High: 13 V Voltage, Output, Low: -13 V Voltage, Supply: В±19 V Other Names: *LF442ACN, *LF442ACN/NOPB, LF442ACN