Результаты поиска J113_Q

Найдено 4 результатов.

• J113_Q
  Fairchild Semiconductor — Fairchild Semiconductor J113_Q Configuration: Single Continuous Drain Current: 2 mA Drain Source Voltage Vds: 35 V Gate-source Breakdown Voltage: - 35 V Mounting Style: Through Hole Package / Case: TO-92 Power Dissipation: 625 mW Resistance Drain-source Rds (on): 100 Ohms Transistor Polarity: N-Channel Drain Source Voltage VDS: 35 V Gate-Source Breakdown Voltage: - 35 V Resistance Drain-Source RDS (on): 100 Ohms
• J113_Q
  Fairchild Semiconductor — Fairchild Semiconductor J113_Q Configuration: Single Continuous Drain Current: 2 mA Drain Source Voltage Vds: 35 V Gate-source Breakdown Voltage: - 35 V Mounting Style: Through Hole Package / Case: TO-92 Power Dissipation: 625 mW Resistance Drain-source Rds (on): 100 Ohms Transistor Polarity: N-Channel Drain Source Voltage VDS: 35 V Gate-Source Breakdown Voltage: - 35 V Resistance Drain-Source RDS (on): 100 Ohms
• MMBFJ113_Q
  Fairchild Semiconductor — Fairchild Semiconductor MMBFJ113_Q Configuration: Single Continuous Drain Current: 2 mA Drain Source Voltage Vds: 35 V Gate-source Breakdown Voltage: - 35 V Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 350 mW Resistance Drain-source Rds (on): 100 Ohms Transistor Polarity: N-Channel Drain Source Voltage VDS: 35 V Gate-Source Breakdown Voltage: - 35 V Resistance Drain-Source RDS (on): 100 Ohms
• MMBFJ113_Q
  Fairchild Semiconductor — Fairchild Semiconductor MMBFJ113_Q Configuration: Single Continuous Drain Current: 2 mA Drain Source Voltage Vds: 35 V Gate-source Breakdown Voltage: - 35 V Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 350 mW Resistance Drain-source Rds (on): 100 Ohms Transistor Polarity: N-Channel Drain Source Voltage VDS: 35 V Gate-Source Breakdown Voltage: - 35 V Resistance Drain-Source RDS (on): 100 Ohms