Результаты поиска J109,126
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- NXP Semiconductors — NXP Semiconductors J109,126 Configuration: Single Continuous Drain Current: 40 mA (Min) Current - Drain (idss) @ Vds (vgs=0): 80mA @ 15V Drain Source Voltage Vds: 25 V Drain To Source Voltage (vdss): 25V Fet Type: N-Channel Gate-source Breakdown Voltage: - 25 V ID_COMPONENTS: 1950340 Input Capacitance (ciss) @ Vds: 30pF @ 10V (VGS) Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: - 25 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 400mW Resistance - Rds(on): 12 Ohm Transistor Polarity: N-Channel Voltage - Breakdown (v(br)gss): 25V Voltage - Cutoff (vgs Off) @ Id: 2V @ 1ВµA Product Category: JFET RoHS: yes Drain Source Voltage VDS: 25 V Gate-Source Breakdown Voltage: - 25 V Factory Pack Quantity: 2000 Part # Aliases: AMO J109 Other Names: 934003860126, J109 AMO