Результаты поиска IXXH100N60B3

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• IXXH100N60B3
  IXYS — IXYS IXXH100N60B3 Collector- Emitter Voltage Vceo Max: 600 V Collector-emitter Saturation Voltage: 1.8 V Continuous Collector Current At 25 C: 210 A Current - Collector (ic) (max): 210A Eoff, Typ, Tj = 125В°c, Igbt (mj): - Eoff, Typ, Tj = 150В°c, Igbt (mj): 2.8 Gate-emitter Leakage Current: 100 nA Ic110, Tc = 110В°c, Igbt, (a): 100 Ic25, Tc = 25В°c, Igbt, (a): 220 Ic90, Tc = 90В°c, Igbt, (a): - If, Tc = 110В°c, Diode (a): - If, Tc = 90В°c, Diode (a): - Igbt Type: PT Input Type: Standard Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Gate Emitter Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 (TO-247AD) Package Style: TO-247 Power - Max: 830W Power Dissipation: 830 W Rthjc, Max, Diode (k/w): - Rthjc, Max, Igbt (c/w): 0.18 Series: XPTв„ў, GenX3в„ў Tfi, Typ, Tj = 25В°c, Igbt, (ns): 150 Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 70A Vce(sat), Typ, Tj = 25В°c, Igbt (v): 1.80 Vces, (v): 600 Voltage - Collector Emitter Breakdown (max): 600V