Результаты поиска IXTA32N20T

Найдено 2 результатов.

• IXTA32N20T
  IXYS — IXYS IXTA32N20T Ciss, Typ, (pf): 1760 Configuration: Single Continuous Drain Current: 32 A Current - Continuous Drain (id) @ 25В° C: 32A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 38nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Id(cont), Tc=25В°c, (a): 32 Input Capacitance (ciss) @ Vds: 1760pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Package Style: TO-263 Pd, (w): 200 Power - Max: 200W Power Dissipation: 200 W Qg, Typ, (nc): 38 Rds On (max) @ Id, Vgs: 72 mOhm @ 16A, 10V Rds(on), Max, Tj=25В°c, (Ω): 0.078 Resistance Drain-source Rds (on): 0.078 Ohms Rthjc, Max, (k/w): 0.75 Series: - Transistor Polarity: N-Channel Trr, Max, (ns): - Trr, Typ, (ns): 110 Vdss, Max, (v): 200 Vgs(th) (max) @ Id: 4.5V @ 250ВµA
• IXTA32N20T
  IXYS — IXYS IXTA32N20T Ciss, Typ, (pf): 1760 Configuration: Single Continuous Drain Current: 32 A Current - Continuous Drain (id) @ 25В° C: 32A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 38nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Id(cont), Tc=25В°c, (a): 32 Input Capacitance (ciss) @ Vds: 1760pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Package Style: TO-263 Pd, (w): 200 Power - Max: 200W Power Dissipation: 200 W Qg, Typ, (nc): 38 Rds On (max) @ Id, Vgs: 72 mOhm @ 16A, 10V Rds(on), Max, Tj=25В°c, (Ω): 0.078 Resistance Drain-source Rds (on): 0.078 Ohms Rthjc, Max, (k/w): 0.75 Series: - Transistor Polarity: N-Channel Trr, Max, (ns): - Trr, Typ, (ns): 110 Vdss, Max, (v): 200 Vgs(th) (max) @ Id: 4.5V @ 250ВµA