Результаты поиска IRLR2905TR
Найдено 15 результатов.
- International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
- International Rectifier — MOSFET N-CH 55V 42A DPAK
- International Rectifier — MOSFET N-CH 55V 42A DPAK
- IR (International Rectifier) — IR (International Rectifier) AUIRLR2905TR Current - Continuous Drain (id) @ 25В° C: 42A Drain To Source Voltage (vdss): 55V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 48nC @ 5V Input Capacitance (ciss) @ Vds: 1700pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 110W Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 2V @ 250ВµA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 16 V Continuous Drain Current: 42 A Resistance Drain-Source RDS (on): 27 mOhms Configuration: Single Mounting Style: SMD/SMT Gate Charge Qg: 32 nC Minimum Operating Temperature: - 55 C Power Dissipation: 110 W Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 26 ns
- IR (International Rectifier) — IR (International Rectifier) AUIRLR2905TR Current - Continuous Drain (id) @ 25В° C: 42A Drain To Source Voltage (vdss): 55V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 48nC @ 5V Input Capacitance (ciss) @ Vds: 1700pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 110W Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 2V @ 250ВµA RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 16 V Continuous Drain Current: 42 A Resistance Drain-Source RDS (on): 27 mOhms Configuration: Single Mounting Style: SMD/SMT Gate Charge Qg: 32 nC Minimum Operating Temperature: - 55 C Power Dissipation: 110 W Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 26 ns
- International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ohm; ID 42A; D-Pak (TO-252AA); PD 110W
- International Rectifier — MOSFET N-CH 55V 42A DPAK
- International Rectifier — MOSFET N-CH 55V 42A DPAK
- International Rectifier — MOSFET N-CH 55V 42A DPAK
- IR (International Rectifier) — IR (International Rectifier) AUIRLR2905TRL Current - Continuous Drain (id) @ 25В° C: 42A Drain To Source Voltage (vdss): 55V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 48nC @ 5V Input Capacitance (ciss) @ Vds: 1700pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 110W Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 2V @ 250ВµA