Результаты поиска IRLR014NTR

Найдено 8 результатов.

• IRLR014NTR
  International Rectifier — MOSFET N-CH 55V 10A DPAK
• IRLR014NTRL
  International Rectifier — MOSFET N-CH 55V 10A DPAK
• IRLR014NTRR
  International Rectifier — MOSFET N-CH 55V 10A DPAK
• AUIRLR014NTR
  IR (International Rectifier) — IR (International Rectifier) AUIRLR014NTR Configuration: Single Quint Source Continuous Drain Current: 10 A Drain-source Breakdown Voltage: 55 V Factory Pack Quantity: 2000 Fall Time: 23 ns Forward Transconductance Gfs (max / Min): 3.1 S Gate Charge Qg: 7.9 nC Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DPAK Power Dissipation: 28 W Resistance Drain-source Rds (on): 140 mOhms Rise Time: 47 ns Rohs: yes Transistor Polarity: N-Channel
• IRLR014NTRPBF
  International Rectifier — MOSFET N-CH 55V 10A DPAK
• AUIRLR014NTRR
  IR (International Rectifier) — IR (International Rectifier) AUIRLR014NTRR Configuration: Single Quint Source Continuous Drain Current: 10 A Drain-source Breakdown Voltage: 55 V Factory Pack Quantity: 3000 Fall Time: 23 ns Forward Transconductance Gfs (max / Min): 3.1 S Gate Charge Qg: 7.9 nC Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DPAK Power Dissipation: 28 W Resistance Drain-source Rds (on): 140 mOhms Rise Time: 47 ns Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Resistance Drain-Source RDS (on): 140 mOhms Forward Transconductance gFS (Max / Min): 3.1 S
• AUIRLR014NTRL
  IR (International Rectifier) — IR (International Rectifier) AUIRLR014NTRL Configuration: Single Quint Source Continuous Drain Current: 10 A Drain-source Breakdown Voltage: 55 V Factory Pack Quantity: 3000 Fall Time: 23 ns Forward Transconductance Gfs (max / Min): 3.1 S Gate Charge Qg: 7.9 nC Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DPAK Power Dissipation: 28 W Resistance Drain-source Rds (on): 140 mOhms Rise Time: 47 ns Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Resistance Drain-Source RDS (on): 140 mOhms Forward Transconductance gFS (Max / Min): 3.1 S
• IRLR014NTRRPBF
  IR (International Rectifier) — IR (International Rectifier) IRLR014NTRRPBF Transistor Polarity: N Channel Continuous Drain Current Id: 10A Drain Source Voltage Vds: 55V On Resistance Rds(On): 140Mohm Rds(On) Test Voltage Vgs: 10V Peak Reflow Compatible (260 C): Yes Rohs Compliant: Yes