Результаты поиска IRLR014N

Найдено 13 результатов.

• IRLR014N
  International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
• IRLR014NTR
  International Rectifier — MOSFET N-CH 55V 10A DPAK
• AUIRLR014N
  IR (International Rectifier) — IR (International Rectifier) AUIRLR014N Continuous Drain Current: 10 A Continuous Drain Current Id: 10A Drain Source Voltage Vds: 55V Drain-source Breakdown Voltage: 55 V Gate Charge Qg: 5.3 nC Gate-source Breakdown Voltage: 16 V Mounting Style: SMD/SMT On Resistance Rds(on): 0.14ohm Package / Case: DPAK Power Dissipation: 28 W Power Dissipation Pd: 28W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 210 mOhms Rohs Compliant: Yes Transistor Polarity: N Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 16 V Resistance Drain-Source RDS (on): 210 mOhms Factory Pack Quantity: 75
• AUIRLR014N
  IR (International Rectifier) — IR (International Rectifier) AUIRLR014N Continuous Drain Current: 10 A Continuous Drain Current Id: 10A Drain Source Voltage Vds: 55V Drain-source Breakdown Voltage: 55 V Gate Charge Qg: 5.3 nC Gate-source Breakdown Voltage: 16 V Mounting Style: SMD/SMT On Resistance Rds(on): 0.14ohm Package / Case: DPAK Power Dissipation: 28 W Power Dissipation Pd: 28W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 210 mOhms Rohs Compliant: Yes Transistor Polarity: N Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 16 V Resistance Drain-Source RDS (on): 210 mOhms Factory Pack Quantity: 75
• IRLR014NPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.14Ohm; ID 10A; D-Pak (TO-252AA); PD 28W; -55de
• IRLR014NPBF
  International Rectifier — MOSFET N-CH 55V 10A DPAK
• IRLR014NTRL
  International Rectifier — MOSFET N-CH 55V 10A DPAK
• IRLR014NTRR
  International Rectifier — MOSFET N-CH 55V 10A DPAK
• AUIRLR014NTR
  IR (International Rectifier) — IR (International Rectifier) AUIRLR014NTR Configuration: Single Quint Source Continuous Drain Current: 10 A Drain-source Breakdown Voltage: 55 V Factory Pack Quantity: 2000 Fall Time: 23 ns Forward Transconductance Gfs (max / Min): 3.1 S Gate Charge Qg: 7.9 nC Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: DPAK Power Dissipation: 28 W Resistance Drain-source Rds (on): 140 mOhms Rise Time: 47 ns Rohs: yes Transistor Polarity: N-Channel
• IRLR014NTRPBF
  International Rectifier — MOSFET N-CH 55V 10A DPAK