Результаты поиска IRL3705N
Найдено 17 результатов.
- International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
- International Rectifier — MOSFET N-CH 55V 89A D2PAK
- International Rectifier — MOSFET N-CH 55V 89A TO-262
- IR (International Rectifier) — IR (International Rectifier) AUIRL3705N RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 16 V Continuous Drain Current: 89 A Resistance Drain-Source RDS (on): 10 mOhms Configuration: Single Mounting Style: Through Hole Package / Case: TO-220AB Gate Charge Qg: 65.3 nC Minimum Operating Temperature: - 55 C Power Dissipation: 170 W Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 37 ns
- IR (International Rectifier) — IR (International Rectifier) AUIRL3705N RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 16 V Continuous Drain Current: 89 A Resistance Drain-Source RDS (on): 10 mOhms Configuration: Single Mounting Style: Through Hole Package / Case: TO-220AB Gate Charge Qg: 65.3 nC Minimum Operating Temperature: - 55 C Power Dissipation: 170 W Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 37 ns
- IR (International Rectifier) — IR (International Rectifier) AUIRL3705N RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 16 V Continuous Drain Current: 89 A Resistance Drain-Source RDS (on): 10 mOhms Configuration: Single Mounting Style: Through Hole Package / Case: TO-220AB Gate Charge Qg: 65.3 nC Minimum Operating Temperature: - 55 C Power Dissipation: 170 W Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 37 ns
- IRF [International Rectifier] — HEXFET Power MOSFET
- IRF [International Rectifier] — Logic-Level Gate Drive
- International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.01Ohm; ID 89A; TO-220AB; PD 170W; VGS +/-16V
- International Rectifier — MOSFET N-CH 55V 89A TO-220AB