Результаты поиска IRFZ44N

Найдено 23 результатов.

• IRFZ44N
  Philips — N-channel enhancement mode TrenchMOS(tm) transistor
• IRFZ44N
  International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
• IRFZ44NS
  International Rectifier — MOSFET N-CH 55V 49A D2PAK
• IRFZ44NL
  International Rectifier — MOSFET N-CH 55V 49A TO-262
• LIRFZ44N
  LRC (Leshan Radio Company) —
• AUIRFZ44N
  IR (International Rectifier) — IR (International Rectifier) AUIRFZ44N Configuration: Single Continuous Drain Current: 49 A Continuous Drain Current Id: 49A Drain Source Voltage Vds: 55V Drain-source Breakdown Voltage: 55 V Gate Charge Qg: 42 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Mounting Style: Through Hole On Resistance Rds(on): 0.0175ohm Package / Case: TO-220AB Power Dissipation: 94 W Power Dissipation Pd: 94W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 17.5 mOhms Rohs Compliant: Yes Transistor Polarity: N Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 17.5 mOhms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 44 ns
• IRFZ44NPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 17.5 Milliohms; ID 49A; TO-220AB; PD 94W; -55deg
• IRFZ44NPBF
  International Rectifier — MOSFET N-CH 55V 49A TO-220AB
• auirfz44nl
  IR (International Rectifier) —
• AUIRFZ44NS
  IR (International Rectifier) — IR (International Rectifier) AUIRFZ44NS RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 49 A Resistance Drain-Source RDS (on): 17.5 mOhms Configuration: Single Mounting Style: SMD/SMT Package / Case: D2PAK Gate Charge Qg: 42 nC Minimum Operating Temperature: - 55 C Power Dissipation: 94 W Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 44 ns