Результаты поиска IRFZ34N

Найдено 17 результатов.

• IRFZ34N
  International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
• IRFZ34NS
  International Rectifier — MOSFET N-CH 55V 29A D2PAK
• IRFZ34NL
  International Rectifier — MOSFET N-CH 55V 29A TO-262
• AUIRFZ34N
  IR (International Rectifier) — IR (International Rectifier) AUIRFZ34N Configuration: Single Continuous Drain Current: 29 A Drain-source Breakdown Voltage: 55 V Gate Charge Qg: 22.7 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220AB Power Dissipation: 68 W Resistance Drain-source Rds (on): 40 mOhms Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 40 mOhms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 31 ns
• AUIRFZ34N
  IR (International Rectifier) — IR (International Rectifier) AUIRFZ34N Configuration: Single Continuous Drain Current: 29 A Drain-source Breakdown Voltage: 55 V Gate Charge Qg: 22.7 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220AB Power Dissipation: 68 W Resistance Drain-source Rds (on): 40 mOhms Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 40 mOhms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 31 ns
• AUIRFZ34N
  IR (International Rectifier) — IR (International Rectifier) AUIRFZ34N Configuration: Single Continuous Drain Current: 29 A Drain-source Breakdown Voltage: 55 V Gate Charge Qg: 22.7 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220AB Power Dissipation: 68 W Resistance Drain-source Rds (on): 40 mOhms Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 40 mOhms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 31 ns
• AUIRFZ34N
  IR (International Rectifier) — IR (International Rectifier) AUIRFZ34N Configuration: Single Continuous Drain Current: 29 A Drain-source Breakdown Voltage: 55 V Gate Charge Qg: 22.7 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220AB Power Dissipation: 68 W Resistance Drain-source Rds (on): 40 mOhms Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 40 mOhms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 31 ns
• IRFZ34NPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ohm; ID 29A; TO-220AB; PD 68W; VGS +/-20V
• IRFZ34NPBF
  International Rectifier — MOSFET N-CH 55V 29A TO-220AB
• IRFZ34NSPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ohm; ID 29A; D2Pak; PD 68W; VGS +/-20V; Qg 34