Результаты поиска IRFZ24N

Найдено 20 результатов.

• IRFZ24N
  Philips — N-channel enhancement mode TrenchMOS(tm) transistor
• IRFZ24N
  International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
• IRFZ24NL
  International Rectifier — MOSFET N-CH 55V 17A TO-262
• IRFZ24NS
  International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
• IRFZ24NPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.07Ohm; ID 17A; TO-220AB; PD 45W; VGS +/-20V
• IRFZ24NPBF
  International Rectifier — MOSFET N-CH 55V 17A TO-220AB
• auirfz24nl
  IR (International Rectifier) — IR (International Rectifier) auirfz24nl Mfr Package Description: ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: THROUGH-HOLE Terminal Finish: MATTE TIN OVER NICKEL Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 3.8 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 17 A DS Breakdown Voltage-Min: 55 V Avalanche Energy Rating (Eas): 71 mJ Drain-source On Resistance-Max: 0.0700 ohm Pulsed Drain Current-Max (IDM): 68 A
• auirfz24nl
  IR (International Rectifier) — IR (International Rectifier) auirfz24nl Mfr Package Description: ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: IN-LINE Terminal Form: THROUGH-HOLE Terminal Finish: MATTE TIN OVER NICKEL Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 3.8 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 17 A DS Breakdown Voltage-Min: 55 V Avalanche Energy Rating (Eas): 71 mJ Drain-source On Resistance-Max: 0.0700 ohm Pulsed Drain Current-Max (IDM): 68 A
• AUIRFZ24NS
  International Rectifier — MOSFET N-CH 55V 17A D2PAK
• IRFZ24NSPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.07Ohm; ID 17A; D2Pak; PD 45W; VGS +/-20V; Qg 20