Результаты поиска IRFR5505TR

Найдено 15 результатов.

• IRFR5505TR
  International Rectifier — -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
• IRFR5505TRL
  International Rectifier — MOSFET P-CH 55V 18A DPAK
• IRFR5505TRR
  International Rectifier — MOSFET P-CH 55V 18A DPAK
• AUIRFR5505TR
  IR (International Rectifier) — IR (International Rectifier) AUIRFR5505TR Current - Continuous Drain (id) @ 25В° C: 18A Drain To Source Voltage (vdss): 55V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 32nC @ 10V Input Capacitance (ciss) @ Vds: 650pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 57W Rds On (max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 18 A Resistance Drain-Source RDS (on): 110 mOhms Configuration: Single Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 57 W Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 20 ns
• AUIRFR5505TR
  IR (International Rectifier) — IR (International Rectifier) AUIRFR5505TR Current - Continuous Drain (id) @ 25В° C: 18A Drain To Source Voltage (vdss): 55V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 32nC @ 10V Input Capacitance (ciss) @ Vds: 650pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 57W Rds On (max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 18 A Resistance Drain-Source RDS (on): 110 mOhms Configuration: Single Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 57 W Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 20 ns
• IRFR5505TRPBF
  International Rectifier — MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.11Ohm; ID -18A; D-Pak (TO-252AA); PD 57W
• IRFR5505TRPBF
  International Rectifier — MOSFET P-CH 55V 18A DPAK
• IRFR5505TRPBF
  International Rectifier — MOSFET P-CH 55V 18A DPAK
• IRFR5505TRPBF
  International Rectifier — MOSFET P-CH 55V 18A DPAK
• AUIRFR5505TRL
  IR (International Rectifier) — IR (International Rectifier) AUIRFR5505TRL Current - Continuous Drain (id) @ 25В° C: 18A Drain To Source Voltage (vdss): 55V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 32nC @ 10V Input Capacitance (ciss) @ Vds: 650pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 57W Rds On (max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 18 A Resistance Drain-Source RDS (on): 110 mOhms Configuration: Single Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 57 W Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 20 ns