Результаты поиска IRFR5305TR

Найдено 13 результатов.

• IRFR5305TR
  International Rectifier — -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
• IRFR5305TRL
  International Rectifier — MOSFET P-CH 55V 31A DPAK
• IRFR5305TRR
  International Rectifier — MOSFET P-CH 55V 31A DPAK
• AUIRFR5305TR
  IR (International Rectifier) — IR (International Rectifier) AUIRFR5305TR Current - Continuous Drain (id) @ 25В° C: 31A Drain To Source Voltage (vdss): 55V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 63nC @ 10V Input Capacitance (ciss) @ Vds: 1200pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 110W Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 31 A Resistance Drain-Source RDS (on): 65 mOhms Configuration: Single Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 11 W Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 39 ns
• IRFR5305TRPBF
  International Rectifier — MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ohm; ID -31A; D-Pak (TO-252AA); PD 110W
• IRFR5305TRPBF
  International Rectifier — MOSFET P-CH 55V 31A DPAK
• IRFR5305TRPBF
  International Rectifier — MOSFET P-CH 55V 31A DPAK
• IRFR5305TRPBF
  International Rectifier — MOSFET P-CH 55V 31A DPAK
• AUIRFR5305TRR
  IR (International Rectifier) — IR (International Rectifier) AUIRFR5305TRR Current - Continuous Drain (id) @ 25В° C: 31A Drain To Source Voltage (vdss): 55V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 63nC @ 10V Input Capacitance (ciss) @ Vds: 1200pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 110W Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 55 V Continuous Drain Current: - 31 A Resistance Drain-Source RDS (on): 65 mOhms Configuration: Single Quint Source Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Fall Time: 63 ns Forward Transconductance gFS (Max / Min): 8 S Gate Charge Qg: 63 nC Minimum Operating Temperature: - 55 C Power Dissipation: 110 W Rise Time: 66 ns Factory Pack Quantity: 3000
• AUIRFR5305TRL
  IR (International Rectifier) — IR (International Rectifier) AUIRFR5305TRL Current - Continuous Drain (id) @ 25В° C: 31A Drain To Source Voltage (vdss): 55V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 63nC @ 10V Input Capacitance (ciss) @ Vds: 1200pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 110W Rds On (max) @ Id, Vgs: 65 mOhm @ 16A, 10V Series: HEXFETВ® Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 55 V Continuous Drain Current: - 31 A Resistance Drain-Source RDS (on): 65 mOhms Configuration: Single Quint Source Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Fall Time: 63 ns Forward Transconductance gFS (Max / Min): 8 S Gate Charge Qg: 63 nC Minimum Operating Temperature: - 55 C Power Dissipation: 110 W Rise Time: 66 ns Factory Pack Quantity: 3000