Результаты поиска IRFR4104

Найдено 16 результатов.

• IRFR4104
  International Rectifier — 40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
• IRFR4104TR
  International Rectifier — MOSFET N-CH 40V 42A DPAK
• AUIRFR4104
  IR (International Rectifier) — IR (International Rectifier) AUIRFR4104 Configuration: Single Continuous Drain Current: 119 A Current - Continuous Drain (id) @ 25В° C: 42A Drain Source Voltage Vds: 40V Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 89nC @ 10V Gate Charge Qg: 59 nC Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2950pF @ 25V Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 4.3mohm Operating Temperature Range: -55°C To +175°C Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 140W Power Dissipation: 140 W Rds On (max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 5.5 mOhms Rohs Compliant: Yes Series: HEXFETВ® Transistor Case Style: D-PAK Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250ВµA
• IRFR4104PBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 4.3 Milliohms; ID 42A; D-Pak (TO-252AA); -55deg
• IRFR4104PBF
  International Rectifier — MOSFET N-CH 40V 42A DPAK
• IRFR4104TRL
  International Rectifier — MOSFET N-CH 40V 42A DPAK
• IRFR4104TRR
  International Rectifier — MOSFET N-CH 40V 42A DPAK
• AUIRFR4104TR
  IR (International Rectifier) — IR (International Rectifier) AUIRFR4104TR Configuration: Single Continuous Drain Current: 119 A Current - Continuous Drain (id) @ 25В° C: 42A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 89nC @ 10V Gate Charge Qg: 59 nC Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2950pF @ 25V Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 140W Power Dissipation: 140 W Rds On (max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V Resistance Drain-source Rds (on): 5.5 mOhms Series: HEXFETВ® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 5.5 mOhms Factory Pack Quantity: 2000 Typical Turn-Off Delay Time: 37 ns
• IRFR4104TRPBF
  International Rectifier — MOSFET, 40V, 119A, 5.5 MOHM, 59 NC QG, D-PAK
• IRFR4104TRPBF
  International Rectifier — MOSFET N-CH 40V 42A DPAK